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MITSUBISHI SEMICONDUCTOR
MGF0919A
L & S BAND GaAs FET [ SMD non - matched ]
DESCRIPTION
The MGF0919A GaAs FET with an N-channel schottky Gate, is designed for use UHF band amplifiers.
FEATURES
* High output power Po=30dBm(TYP.) @f=1.9GHz,Pin=12dBm * High power gain Gp=19dB(TYP.) @f=1.9GHz * High power added efficiency add=37%(TYP.) @f=1.9GHz,Pin=12dBm * Hermetic Package
APPLICATION
* For UHF Band power amplifiers
Fig.1
QUALITY
* GG
RECOMMENDED BIAS CONDITIONS
* Vds=10V * Ids=300mA * Rg=500
Delivery
-01:Tape & Reel(1K), -03:Trai(50pcs)
(Ta=25C)
Absolute maximum ratings
Symbol Parameter
VGSO Gate to sourcebreakdown voltage VGDO Gate to drain breakdown voltage ID IGR IGF PT Tch Tstg
Drain current Reverse gate current Forward gate current Total power dissipation Cannel temperature Storage temperature
Ratings
-15 -15 800 -2.4 10 6 175 -65 to +175
Unit
V V mA mA mA W C C
Electrical characteristics
Symbol
IDSS VGS(off) gm Po add GLP NF Rth(ch-c)
(Ta=25C)
Parameter
Saturated drain current Gate to source cut-off voltage Transconductance Output power Power added Efficiency Linear Power Gain Noise figure Thermal Resistance *1
Test conditions
Min. VDS=3V,VGS=0V VDS=3V,ID=2.0mA VDS=3V,ID=300mA VDS=10V,ID=300mA,f=1.9GHz Pin=12dBm VDS=10V,ID=300mA,f=1.9GHz -1.0 28 17 Vf Method -
Limits
Typ. 600 260 30 37 19 1.2 17 Max. 800 -5.0 25
Unit
mA V mS dBm % dB dB C/W
*1:Channel to case /
Above parameters, ratings, limits are subject to change.
(1/12)
Mitsubishi Electric
Feb./2005
MGF0919A TYPICAL CHARACTERISTICS
Po,Gp,PAE vs.Pin 35 70
30
Vds=10V Id(off)=300mA f=1.9GHz
60
25
Po
50 Gp(dBm)PAE(%)
Po(dBm)
20
PAE
40
15
Gp
30
10
20
5
10
0 -10 -5 0 5 10 15 Pin(dBm)
0
Pi(SCL) vs.Po(SCL),IM3 40 35 30 25 20 15 10 5 0 -5 -10 -15 30 20 10 0 -10 -20 -30 -40 -50 -60 -70 5 10 15 20
Po(SCL)(dBm)
IM3
-10
-5
0
Pin(SCL)(dBm)
(2/12)
Mitsubishi Electric
IM3(dBc)
VD=10V ID=300mA f1=1.90GHz f2=1.91Ghz
Po
Feb./2005
MGF0919A S PARAMETERS (Ta=25C,VD=10V,ID=300mA, Reference Plane see Fig.1)
freq. (MHz) 600 1000 1400 1800 2200 2600 3000 3400 3800 4200 4600 5000 5400 5800 6200 6600 7000 7400 7800 8200 8600 9000 9400 9800 10200 10600 11000 11400 11800 12200 S11 (mag) 0.933 0.904 0.888 0.879 0.876 0.876 0.876 0.877 0.876 0.873 0.868 0.861 0.853 0.842 0.830 0.818 0.803 0.788 0.772 0.753 0.732 0.706 0.667 0.623 0.590 0.584 0.619 0.696 0.800 0.899 (ang) -74.30 -103.32 -122.18 -134.53 -142.94 -149.11 -154.07 -158.32 -162.04 -165.28 -168.13 -170.89 -174.26 -179.57 176.81 170.87 163.91 157.93 153.18 148.85 143.64 136.22 125.58 111.25 93.44 73.04 51.50 30.59 12.12 -2.56 (mag) 7.339 5.703 4.487 3.597 2.956 2.499 2.175 1.946 1.780 1.655 1.557 1.475 1.405 1.345 1.295 1.257 1.235 1.229 1.244 1.279 1.334 1.405 1.487 1.574 1.653 1.713 1.739 1.712 1.612 1.419 S21 (ang) 130.03 108.92 92.96 80.59 70.65 62.27 54.80 47.84 41.10 34.44 27.78 21.10 14.42 7.74 1.06 -5.66 -12.47 -19.50 -26.89 -34.84 -43.57 -53.33 -64.35 -76.85 -91.04 -106.99 -124.73 -144.10 -164.77 175.59 (mag) 0.021 0.029 0.032 0.032 0.031 0.029 0.028 0.027 0.027 0.028 0.029 0.030 0.032 0.034 0.036 0.038 0.041 0.044 0.049 0.055 0.062 0.072 0.084 0.099 0.115 0.134 0.152 0.170 0.185 0.193 S12 (ang) 47.28 31.40 19.66 10.98 4.55 -0.27 -3.93 -6.75 -8.96 -10.73 -12.16 -13.32 -14.29 -15.15 -15.98 -16.89 -18.03 -19.57 -21.70 -24.65 -28.65 -33.94 -40.75 -49.26 -59.62 -71.91 -86.08 -101.97 -119.23 -137.32 (mag) 0.269 0.341 0.405 0.460 0.507 0.546 0.579 0.605 0.627 0.645 0.660 0.672 0.683 0.693 0.701 0.708 0.712 0.713 0.711 0.703 0.690 0.670 0.643 0.608 0.566 0.517 0.462 0.391 0.384 0.463
2.0
S22 (ang) -137.41 -141.53 -144.12 -145.74 -146.82 -147.71 -148.61 -149.68 -151.00 -152.57 -154.36 -156.31 -158.32 -160.29 -162.12 -163.74 -165.09 -166.15 -166.96 -167.62 -168.31 -169.31 -170.99 -173.83 -178.45 177.11 175.48 -179.26 -163.79 -150.25
K 0.25 0.29 0.35 0.44 0.55 0.68 0.80 0.90 0.96 0.99 1.03 1.10 1.12 1.16 1.21 1.25 1.26 1.27 1.22 1.19 1.17 1.14 1.15 1.15 1.12 1.06 0.99 0.93 0.87 0.82
MAG/MSG
(dB) 25.43 22.94 21.47 20.51 19.79 19.35 18.90 18.58 18.19 17.72 16.20 14.98 14.31 13.55 12.76 12.20 11.74 11.35 11.23 11.02 10.83 10.63 10.14 9.69 9.45 9.59 10.58 10.03 9.40 8.66
Gate Mark Round corner (1)
0.80
0.8
Gate Mark
(1) Reference Plane
4.20
1.20
(3)
Reference Plane (2)
4.00 0.25
(2) 0.6
2.5
(1) Gate (2) Drain (3) Source
0.3
BACK SIDE PATTERN
(Unit:mm)
Fig.1 OUTLINE DRAWING
(3/12)
Mitsubishi Electric
2.8
Feb./2005
MGF0919A RF TEST DATA(CW) VD=10V,Idq=0.3A Gp,Po,Id(RF),Ig(RF) v.s. Pin
Gp v.s. Pin
16 15 14 Gp(dB) 13
freq.=3.3GHz
34 32 30 28 26
Po v.s. Pin
freq.=3.3GHz 0.7
Id(RF) v.s. Pin freq.=3.3GHz 5 Tc=80deg.C Tc=25deg.C Tc=-20deg.C
Ig(RF) v.s. Pin freq.=3.3GHz Tc=80deg.C 4 3 2 Tc=25deg.C Tc=-20deg.C
0.6
Id(RF)(A)
Po(dBm)
12 11 10 9 8 7 6 -5 0 5 10 15 20 25 Pin(dBm)
24 22 20 18
0.5
Ig(RF)(mA)
1 0 -1
0.4 Tc=80deg.C Tc=25deg.C Tc=-20deg.C 0.2 -5 0 5 10 15 20 25 -5 0 Pin(dBm) 5 10 15 Pin(dBm) 20 25 0.3
Tc=80deg.C Tc=25deg.C Tc=-20deg.C
16 14 12 10
-2 -3 -4 -5 0 5 10 15 20 25
Pin(dBm)
MITSUBISHI ELECTRIC CORPORATION (4/12)
MGF0919A RF TEST DATA(CW) Gp,Po,Id(RF),Ig(RF) v.s. Pin
Gp v.s. Pin freq.=3.3GHz VD=10V
16 15 14 13
Po v.s. Pin freq.=3.3GHz VD=10V 34 32 30 28 26 Po(dBm)
Id(RF)(A) 0.4 0.5
Id(RF) v.s. Pin freq.=3.3GHz VD=10V
5 4 3 2 0.3 Ig(RF)(mA) 1 0 -1 0.1 -2
Ig(RF) v.s. Pin freq.=3.3GHz VD=10V IDQ=0.3A IDQ=0.24A IDQ=0.18A IDQ=0.08A
Gp(dB)
12 11 10 9 8 7 6 -5 0
IDQ=0.3A IDQ=0.24A IDQ=0.18A IDQ=0.08A
24 22 20 18 16 14 12 10 IDQ=0.3A IDQ=0.24A IDQ=0.18A IDQ=0.08A
0.2
0.0
IDQ=0.3A IDQ=0.24A IDQ=0.18A IDQ=0.08A
-5 0 5 10 15 20 25
-3 -4 -5 0 5 10 15 20 25 Pin(dBm)
5
10
15
20
25
-5
0
5
10
15
20
25
Pin(dBm)
Pin(dBm)
Pin(dBm)
MITSUBISHI ELECTRIC CORPORATION (5/12)
MGF0919A RF TEST DATA(CW) Gp,Po,Id(RF),Ig(RF) v.s. Pin
Gp v.s. Pin freq.=3.3GHz IDQ=0.3
16 15 14 13 Gp(dB) Po(dBm) 12 11 10 9 8 7 6 -5 0 5 10 15 20 25 Pin(dBm) 34 32 30 28 26
Po v.s. Pin freq.=3.3Hz IDQ=0.3A
0.5
Id(RF) v.s. Pin freq.=3.3GHz IDQ=0.3A
5 4
0.4
Ig(RF) v.s. Pin freq.=3.3GHz IDQ=0.3A VD=10V VD=9V VD=8V
3 2
Id(RF)(A)
24 22 20 18 16 14 12 10 -5 0 5 10 15 20 25 Pin(dBm)
0.3
Ig(RF)(mA)
1 0 -1
0.2
VD=10V VD=9V VD=8V
VD=10V VD=9V VD=8V
0.1
VD=10V VD=9V VD=8V
-2 -3 -4
0.0 -5 0 5 10 15 20 25 Pin(dBm)
-5
0
5
10
15
20
25
Pin(dBm)
MITSUBISHI ELECTRIC CORPORATION (6/12)
MGF0919A RF TEST DATA(W-CDMA) VD=10V,Idq=0.3A ACLR v.s. Po 3GPP TEST MODEL1 64ch's Single Signal
ACLR -5MHz freq.=3.3GHz -15 -20 -25 -30 ACLR(dBc) ACLR(dBc) -35 -40 -45 -50 -55 -60 -65 -70 5 10 15 20 25 30 Po(dBm) Tc=80deg.C Tc=25deg.C Tc=-20deg.C
ACLR -10MHz freq.=3.3GHz -15 -20 -25 -30 ACLR(dBc) -35 -40 -45 -50 -55 -60 -65 -70 5 10 15 20 25 30 Po(dBm) Tc=80deg.C Tc=25deg.C Tc=-20deg.C
ACLR +5MHz freq.=3.3GHz -15 -20 -25 -30 ACLR(dBc) -35 -40 -45 -50 -55 -60 -65 -70 5 10 15 20 25 30 Po(dBm) Tc=80deg.C Tc=25deg.C Tc=-20deg.C
ACLR +10MHz freq.=3.3GHz -15 -20 -25 -30 -35 -40 -45 -50 -55 -60 -65 -70 5 10 15 20 25 30 Po(dBm) Tc=80deg.C Tc=25deg.C Tc=-20deg.C
MITSUBISHI ELECTRIC CORPORATION (7/12)
MGF0919A RF TEST DATA(W-CDMA) ACLR v.s. Po 3GPP TEST MODEL1 64ch's Single Signal
ACLR -5MHz freq.=3.3GHz VD=10V
-15 -20 -25 -30 ACLR(dBc) ACLR(dBc) -35 -40 -45 -50 -55 -60 -65 -70 5 10 15 20 25 30 Po(dBm) -15
ACLR -10MHz freq.=3.3GHz VD=10V
-15
ACLR +5MHz freq.=3.3GHz VD=10V
-15
ACLR +10MHz freq.=3.3GHz VD=10V IDQ=0.3A IDQ=0.24A IDQ=0.18A IDQ=0.08A
IDQ=0.3A IDQ=0.24A IDQ=0.18A IDQ=0.08A
-20 -25 -30 -35 -40 -45 -50 -55 -60 -65 -70 5 10
IDQ=0.3A IDQ=0.24A IDQ=0.18A IDQ=0.08A
ACLR(dBc)
-20 -25 -30
IDQ=0.3A IDQ=0.24A IDQ=0.18A IDQ=0.08A
-20 -25 -30 ACLR(dBc) -35 -40 -45 -50 -55 -60 -65 -70
-35 -40 -45 -50 -55 -60 -65 -70
15
20
25
30
5
10
15
20
25
30
5
10
15
20
25
30
Po(dBm)
Po(dBm)
Po(dBm)
MITSUBISHI ELECTRIC CORPORATION (8/12)
MGF0919A RF TEST DATA(W-CDMA) ACLR v.s. Po 3GPP TEST MODEL1 64ch's Single Signal
ACLR -5MHz freq.=3.3GHz IDQ=0.3A
-15 -20 -25 -30 ACLR(dBc) -35 -40 -45 -50 -55 -60 -65 -70 5 10 15 20 25 30 Po(dBm) -15
ACLR -10MHz freq.=3.3GHz IDQ=0.3A
-15
ACLR +5MHz freq.=3.3GHz IDQ=0.3A
-15
ACLR +10MHz freq.=3.3GHz IDQ=0.3A
VD=10V VD=9V VD=8V
ACLR(dBc)
-20 -25 -30
VD=10V VD=9V VD=8V
-20 -25 -30 ACLR(dBc) -35 -40 -45 -50 -55 -60 -65 -70
VD=10V VD=9V VD=8V
-20 -25 -30 ACLR(dBc) -35 -40 -45 -50 -55 -60 -65 -70
VD=10V VD=9V VD=8V
-35 -40 -45 -50 -55 -60 -65 -70 5 10 15 20 25 30 Po(dBm)
5
10
15
20
25
30
5
10
15
20
25
30
Po(dBm)
Po(dBm)
MITSUBISHI ELECTRIC CORPORATION (9/12)
MGF0919A RF TEST DATA VD=10V,Idq=0.3A IM3,IM5 v.s. Pin
IM3,IM5 v.s. Po -10 IM3_Lo -20 IM3_Hi IM5_Lo IM5_Hi -30 IM3,IM5(dBc) f1=3.30GHz f2=3.31GHz -40
-50
-60
-70 7 9 11 13 15 17 19 21 23 25 27 Po(S.C.L.)(dBm)
MITSUBISHI ELECTRIC CORPORATION (10/12)
(11/12)
Mitsubishi Electric
Feb./2005
MITSUBISHI SEMICONDUCTOR
MGF0919A
L & S BAND GaAs FET [ SMD non - matched ]
Requests Regarding Safety Designs Mitsubishi Electric constantly strives to raise the level of its quality and reliability. Despite these concerted efforts, however, there will be occasions when our semiconductor products suffer breakdowns, malfunctions or other problems. In view of this reality, it is requested that every feasible precaution be taken in the pursuit of redundancy design, malfunction prevention design and other safety-related designs, to prevent breakdowns or malfunctions in our products from resulting in accidents involving people, fires, social losses or other problems, thereby upholding the highest levels of safety in the products when in use by customers. Matters of Importance when Using these Materials 1. These materials are designed as reference materials to ensure that all customers purchase Mitsubishi Electric semiconductors best suited to their specific use applications. Please be aware, however, that the technical information contained in these materials does not comprise consent for the execution or use of intellectual property rights or other rights owned by Mitsubishi Electric Corporation. 2. Mitsubishi Electric does not assume responsibility for damages resulting from the use of product data, graphs, charts, programs, algorithms or other applied circuit examples described in these materials, or for the infringement of the rights of third-party owners resulting from such use. 3. The data, graphs, charts, programs, algorithms and all other information described in these materials were current at the issue of these materials, with Mitsubishi Electric reserving the right to make any necessary updates or changes in the products or specifications in these materials without prior notice. Before purchasing Mitsubishi Electric semiconductor products, therefore, please obtain the latest available information from Mitsubishi Electric directly or an authorized dealer. 4. Every possible effort has been made to ensure that the information described in these materials is fully accurate. However, Mitsubishi Electric assumes no responsibility for damages resulting from inaccuracies occurring within these materials. 5. When using the product data, technical contents indicated on the graphs, charts, programs or algorithms described in these materials, assessments should not be limited to only the technical contents, programs and algorithm units. Rather, it is requested that ample evaluations be made of each individual system as a whole, with the customer assuming full responsibility for decisions on the propriety of application. Mitsubishi Electric does not accept responsibility for the propriety of application. 6. The products described in these materials, with the exception of special mention concerning use and reliability, have been designed and manufactured with the purpose of use in general electronic machinery. Accordingly these products have not been designed and manufactured with the purpose of application in machinery or systems that will be used under conditions that can affect human life, or in machinery or systems used in social infrastructure that demand a particularly high degree of reliability. When considering the use of the products described in these materials in transportation machinery (automobiles, trains, vessels), for objectives related to medical treatment, aerospace, nuclear power control, submarine repeaters or systems or other specialized applications, please consult with Mitsubishi Electric directly or an authorized dealer. 7. When considering use of products for purposes other than the specific applications described in these materials, please inquire at Mitsubishi Electric or an authorized dealer. 8. The prior consent of Mitsubishi Electric in writing is required for any reprinting or reproduction of these materials. 9. Please direct any inquiries regarding further details of these materials, or any other comments or matters of attention, to Mitsubishi Electric or an authorized dealer.
(12/12)
Mitsubishi Electric
Feb./2005

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